Thin film tunnel field effect transistors having relatively increased width

ABSTRACT

Thin film tunnel field effect transistors having relatively increased width are described. In an example, integrated circuit structure includes an insulator structure above a substrate. The insulator structure has a topography that varies along a plane parallel with global plane of the substrate. A channel material layer is on the insulator structure. The channel material layer is conformal with the In topography of the insulator structure. A gate electrode is over a channel portion of the channel material layer on the insulator structure. A first conductive contact is over a source portion of the channel material layer on the insulator structure, the source portion having a first conductivity type. A second conductive contact is over a drain portion of the channel material layer on the insulator structure, the drain portion having a second conductivity type opposite the first conductivity type.

TECHNICAL FIELD

Embodiments of the disclosure are in the field of integrated circuitstructures and, in particular, thin film tunnel field effect transistorshaving relatively increased width.

BACKGROUND

For the past several decades, the scaling of features in integratedcircuits has been a driving force behind an ever-growing semiconductorindustry. Scaling to smaller and smaller features enables increaseddensities of functional units on the limited real estate ofsemiconductor chips.

For example, shrinking transistor size allows for the incorporation ofan increased number of memory or logic devices on a chip, lending to thefabrication of products with increased capacity. The drive for ever-morecapacity, however, is not without issue. The necessity to optimize theperformance of each device becomes increasingly significant. In themanufacture of integrated circuit devices, multi-gate transistors, suchas tri-gate transistors, have become more prevalent as device dimensionscontinue to scale down. In conventional processes, tri-gate transistorsare generally fabricated on either bulk silicon substrates orsilicon-on-insulator substrates. In some instances, bulk siliconsubstrates are preferred due to their lower cost and compatibility withthe existing high-yielding bulk silicon substrate infrastructure.Scaling multi-gate transistors has not been without consequence,however. As the dimensions of these fundamental building blocks ofmicroelectronic circuitry are reduced and as the sheer number offundamental building blocks fabricated in a given region is increased,the constraints on the semiconductor processes used to fabricate thesebuilding blocks have become overwhelming.

The performance of a thin-film transistor (TFT) may depend on a numberof factors. For example, the efficiency at which a TFT is able tooperate may depend on the sub threshold swing of the TFT, characterizingthe amount of change in the gate-source voltage needed to achieve agiven change in the drain current. A smaller sub threshold swing enablesthe TFT to turn off to a lower leakage value when the gate-sourcevoltage drops below the threshold voltage of the TFT. The conventionaltheoretical lower limit at room temperature for the sub threshold swingof the TFT is 60 millivolts per decade of change in the drain current.

Variability in conventional and state-of-the-art fabrication processesmay limit the possibility to further extend them into the, e.g., 10 nmor sub-10 nm range. Consequently, fabrication of the functionalcomponents needed for future technology nodes may require theintroduction of new methodologies or the integration of new technologiesin current fabrication processes or in place of current fabricationprocesses.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a cross-sectional view taken along a gate “width” ofa conventional thin film integrated circuit structure.

FIG. 1B illustrates a cross-sectional view taken along a gate “width” ofa thin film integrated circuit structure having relatively increasedwidth, in accordance with an embodiment of the present disclosure.

FIGS. 1C, 1D, and 1E illustrate angled and direct cross-sectional viewsof a thin film integrated circuit structure having relatively increasedwidth, in accordance with an embodiment of the present disclosure.

FIG. 1F illustrates a cross-sectional view of a thin film tunnel fieldeffect transistor, in accordance with an embodiment of the presentdisclosure.

FIG. 1G is an IV plot for a thin film tunnel field effect transistor, inaccordance with an embodiment of the present disclosure.

FIG. 2A illustrates an angled three-dimensional view of another thinfilm integrated circuit structure having relatively increased width, inaccordance with another embodiment of the present disclosure.

FIG. 2B illustrates a top-down view of a portion of the thin filmintegrated circuit structure of FIG. 2A, in accordance with anotherembodiment of the present disclosure.

FIGS. 3A-3H illustrate cross-sectional and plan views of various stagesin a method of fabricating a thin film integrated circuit structurehaving relatively increased width, in accordance with an embodiment ofthe present disclosure.

FIGS. 4A-4C illustrate cross-sectional and plan views of various stagesin a method of fabricating a thin film integrated circuit structurehaving relatively increased width, in accordance with an embodiment ofthe present disclosure.

FIGS. 5A and 5B are top views of a wafer and dies that include one ormore thin film tunnel field effect transistors having relativelyincreased width, in accordance with one or more of the embodimentsdisclosed herein.

FIG. 6 is a cross-sectional side view of an integrated circuit (IC)device that may include one or more thin film tunnel field effecttransistors having relatively increased width, in accordance with one ormore of the embodiments disclosed herein.

FIG. 7 is a cross-sectional side view of an integrated circuit (IC)device assembly that may include one or more thin film tunnel fieldeffect transistors having relatively increased width, in accordance withone or more of the embodiments disclosed herein.

FIG. 8 illustrates a computing device in accordance with oneimplementation of an embodiment of the disclosure.

DESCRIPTION OF THE EMBODIMENTS

Thin film tunnel field effect transistors having relatively increasedwidth are described. In the following description, numerous specificdetails are set forth, such as specific material and tooling regimes, inorder to provide a thorough understanding of embodiments of the presentdisclosure. It will be apparent to one skilled in the art thatembodiments of the present disclosure may be practiced without thesespecific details. In other instances, well-known features, such assingle or dual damascene processing, are not described in detail inorder to not unnecessarily obscure embodiments of the presentdisclosure. Furthermore, it is to be understood that the variousembodiments shown in the Figures are illustrative representations andare not necessarily drawn to scale. In some cases, various operationswill be described as multiple discrete operations, in turn, in a mannerthat is most helpful in understanding the present disclosure, however,the order of description should not be construed to imply that theseoperations are necessarily order dependent. In particular, theseoperations need not be performed in the order of presentation.

Certain terminology may also be used in the following description forthe purpose of reference only, and thus are not intended to be limiting.For example, terms such as “upper”, “lower”, “above”, “below,” “bottom,”and “top” refer to directions in the drawings to which reference ismade. Terms such as “front”, “back”, “rear”, and “side” describe theorientation and/or location of portions of the component within aconsistent but arbitrary frame of reference which is made clear byreference to the text and the associated drawings describing thecomponent under discussion. Such terminology may include the wordsspecifically mentioned above, derivatives thereof, and words of similarimport.

Embodiments described herein may be directed to front-end-of-line (FEOL)semiconductor processing and structures. FEOL is the first portion ofintegrated circuit (IC) fabrication where the individual devices (e.g.,transistors, capacitors, resistors, etc.) are patterned in thesemiconductor substrate or layer. FEOL generally covers everything up to(but not including) the deposition of metal interconnect layers.Following the last FEOL operation, the result is typically a wafer withisolated transistors (e.g., without any wires).

Embodiments described herein may be directed to back end of line (BEOL)semiconductor processing and structures. BEOL is the second portion ofIC fabrication where the individual devices (e.g., transistors,capacitors, resistors, etc.) are interconnected with wiring on thewafer, e.g., the metallization layer or layers. BEOL includes contacts,insulating layers (dielectrics), metal levels, and bonding sites forchip-to-package connections. In the BEOL part of the fabrication stagecontacts (pads), interconnect wires, vias and dielectric structures areformed. For modern IC processes, more than 10 metal layers may be addedin the BEOL.

Embodiments described below may be applicable to FEOL processing andstructures, BEOL processing and structures, or both FEOL and BEOLprocessing and structures. In particular, although an exemplaryprocessing scheme may be illustrated using a FEOL processing scenario,such approaches may also be applicable to BEOL processing. Likewise,although an exemplary processing scheme may be illustrated using a BEOLprocessing scenario, such approaches may also be applicable to FEOLprocessing.

One or more embodiments described herein are directed to structures andarchitectures for fabricating BEOL thin film tunnel field effecttransistors having relatively increased width relative to thin filmtransistors (TFTs), including state-of-the-art thin film tunnel fieldeffect transistors, of conventional geometry. Embodiments may include orpertain to one or more of back end transistors, thin film transistors,and system-on-chip (SoC) technologies. One or more embodiments may beimplemented to realize high performance backend transistors topotentially increase monolithic integration of backend logic plus memoryin SoCs of future technology nodes.

In accordance with an embodiment of the present disclosure, threedimensional (3D) tunnel field effect transistors (FETs) having increasedgate width are described. In an embodiment, such FETs are based on achannel material including polycrystalline silicon, a polycrystallineIII-V material, or a semiconducting oxide material. In an embodiment,such FETs are implemented for use in one transistor-one resistive memory(1T-1R, or 1T1R) memory cells for embedded non-volatile memory (eNVM)applications.

To provide context, it is to be appreciated that conventionaltransistors often require high voltages to write the memory in 1T1Rarrangements. Such a requirement may be challenging for low Vcc eNVM. Atunnel-FET can accommodate for such Vcc issues, but the drive current istypically low.

In accordance with one or more embodiments described herein, addressingone or more of the above issues, a three-dimensional (3D) tunnel FET isdescribed. The 3D tunnel FET is used as a selector for eNVMapplications. In an embodiment, a 3D tunnel FET described herein hashigh drive due to increased gate width relative to a convention, planartunnel FET. In an embodiment, a 3D tunnel FET provides low Vcc for eNVMapplications.

To provide further context, there is recent demand for advanced SoCshaving monolithically integrated back-end transistors for logic andmemory functionality at higher metal layers. For dense 1T1R based eNVMcells built on backend levels, it may be advantageous to engineer thetransistors for low voltage and high drive strength. However,conventional transistors have significant associated challenges, some ofwhich are described above.

In accordance with embodiments or the present disclosure, non-limitingexamples of tunnel FETs are described below having non-planarstructures. In one embodiment, the non-planarity of the structureseffectively increases the transistor width (and hence the drive strengthand performance) for a given projected area. This may be achieved whilemaintaining a low voltage operation (e.g., due to tunnelingcharacteristics). The non-limiting examples described below based onnon-planar architectures may enable the fabrication of higher effectivewidths for a transistor for a scaled (reduced) projected area.Accordingly, the drive strength and performance of such transistors maybe improved over state-of-art planar backend transistors. Applicationsof such systems may include, but are not limited to, back end (BEOL)logic, memory, or analog applications. Embodiments described herein mayinclude non-planar structures that effectively increase transistor width(relative to a planar device) by integrating the devices in uniquearchitectures.

To provide a benchmark, FIG. 1A illustrates a cross-sectional view takenalong a gate “width” of a conventional thin film integrated circuitstructure.

Referring to FIG. 1A, a planar tunnel field effect transistor 100 isformed above a substrate 102, e.g., on an insulating layer 104 above asubstrate, as is shown. The planar tunnel field effect transistor 100includes a channel material 106, such as polycrystalline silicon. A gateelectrode 108 is formed on a gate dielectric layer 114 formed on thechannel material 106. The gate electrode 108 may include a fill material110 on a workfunction layer 112, as is depicted. The gate electrode 108may expose regions 116 of the channel material 106 and the gatedielectric layer 114, as is depicted. Alternatively, the channelmaterial 106 and the gate dielectric layer 114 have a same lateraldimension as the gate electrode 108. It is to be appreciated that a pairof source/drain regions of opposite polarity from one another are intoand out of the page of the view of FIG. 1A.

The planar tunnel field effect transistor 100 has an effective gatewidth that is the length of the planar channel material 106 betweenlocations A and B, as depicted in FIG. 1A. The planar tunnel fieldeffect transistor 100 may be referred to herein as a planar BEOL fieldeffect transistor (FET).

As a first example of a structure having relative increase in transistorwidth (e.g., relative to the structure of FIG. 1A), FIG. 1B illustratesa cross-sectional view taken along a gate “width” of a thin filmintegrated circuit structure having relatively increased width, inaccordance with an embodiment of the present disclosure.

Referring to FIG. 1B, a non-planar tunnel field effect transistor 150 isformed above a substrate 152, e.g., on an insulating layer 154 above asubstrate, as is shown. A pair of dielectric fins 155 is on theinsulating layer 154. The non-planar tunnel field effect transistor 150includes a channel material layer 156, such as a polycrystalline siliconlayer. The channel material layer 156 is conformal with the pair ofdielectric fins 155 and with exposed portions of the insulating layer154 between the pair of dielectric fins 155. A gate electrode 158 isformed on a gate dielectric layer 164 formed on the channel materiallayer 156. The gate electrode 158 may include a fill material 160 on aworkfunction layer 162, as is depicted. The gate electrode 158 mayexpose regions 166 of the channel material layer 156 and the gatedielectric layer 164, as is depicted. Alternatively, the channelmaterial layer 156 and the gate dielectric layer 164 have a same lateraldimension as the gate electrode 158. It is to be appreciated that a pairof source/drain regions of opposite polarity from one another are intoand out of the page of the view of FIG. 1B.

The non-planar tunnel field effect transistor 150 has an effective gatewidth that is the length of the conformal channel material layer 156between locations A′ and B′, i.e., the full length including undulatingportions over the tops and sidewalls of the dielectric fins 155, as isdepicted in FIG. 1B. The non-planar tunnel field effect transistor 150may be referred to herein as a non-planar BEOL field effect transistor(FET). In comparison to FIG. 1A, the structure of FIG. 1B highlights theadvantage of a non-planar architecture to increase effective gate width,referred to herein as a relatively increased width.

To highlight other aspects of a non-planar tunnel field effecttransistor topography, FIGS. 1C, 1D, and 1E illustrate angled and directcross-sectional views of a thin film integrated circuit structure havingrelatively increased width, in accordance with an embodiment of thepresent disclosure. It is to be appreciated that one dielectric fin isillustrated in FIGS. 1C-1E for simplification. Embodiments may include asingle device fabricated over one (FIG. 1C), two (FIG. 1B) or more suchdielectric fins.

Referring to FIGS. 1C-1E, an integrated circuit structure 170 includes adielectric fin 155 on an insulator layer 154 above a substrate 152. Thedielectric fin 155 has a top and sidewalls. A channel material layer156, such as a polycrystalline silicon layer, is on the top andsidewalls of the dielectric fin 155. A gate electrode 158 is over achannel portion of the channel material layer 156 on the top andsidewalls of the dielectric fin 155. The gate electrode 158 has a firstside opposite a second side. A first conductive contact (left 174) isadjacent the first side of the gate electrode 158, over a source portion197 of the channel material layer 156 on the top and sidewalls of thedielectric fin 155. A second conductive contact (right 174) is adjacentthe second side of the gate electrode 158, over a drain portion 199 ofthe channel material layer 156 on the top and sidewalls of thedielectric fin 155.

In an embodiment, the source portion 197 of the channel material layer156 is a p-type doped portion (e.g., a boron-doped portion of apolycrystalline silicon layer), and the drain portion 199 of the channelmaterial layer 156 is an n-type doped portion (e.g., a phosphorus-dopedportion or an arsenic-doped portion of a polycrystalline silicon layer).In one embodiment, an intrinsic or lightly doped region 198 is betweenthe source portion 197 of the channel material layer 156 and the drainportion 199 of the channel material layer 156.

In an embodiment, the integrated circuit structure 170 further includesa gate dielectric layer 164 between the gate electrode 158 and thechannel portion of the channel material layer 156 on the top andsidewalls of the dielectric fin 155, as is depicted in FIGS. 1C-1E. Inan embodiment, the integrated circuit structure 170 further includes afirst dielectric spacer (left 172) between the first conductive contact174 and the first side of the gate electrode 158, on the top andsidewalls of the dielectric fin 155. A second dielectric spacer (right172) is between the second conductive contact 174 and the second side ofthe gate electrode 158, the second dielectric spacer 172 on the top andsidewalls of the dielectric fin 155, as is depicted in FIGS. 1C and 1E.In one such embodiment, the gate dielectric layer 164 is further alongthe first and second dielectric spacers 172, as is also depicted inFIGS. 1C and 1E.

Referring collectively to FIGS. 1B-1E, in accordance with an embodimentof the present invention, an integrated circuit structure 150 or 170includes an insulator structure 155 above a substrate 152. The insulatorstructure 155 has a topography that varies along a plane (ab) parallelwith a global plane of the substrate 152. A channel material layer 156is on the insulator structure 155. The channel material layer 156 isconformal with the topography of the insulator structure 155. In anembodiment, the insulator structure 150 or 170 includes one or more fins155. Individual ones of the fins 155 have a top and sidewalls. Thechannel material layer 156 is on the top and sidewalls of the individualones of the fins 155. In an embodiment, the insulator structure 155(such as fin or fins 155) is composed of a dielectric material such as,but not limited to, silicon dioxide, silicon oxy-nitride, siliconnitride, or carbon-doped silicon nitride. In an embodiment, theinsulator structure 155 is composed of a low-k dielectric material.

In an embodiment, dielectric fins described herein may be fabricated asa grating structure, where the term “grating” is used herein to refer toa tight pitch grating structure. In one such embodiment, the tight pitchis not achievable directly through conventional lithography. Forexample, a pattern based on conventional lithography may first beformed, but the pitch may be halved by the use of spacer maskpatterning, as is known in the art. Even further, the original pitch maybe quartered by a second round of spacer mask patterning. Accordingly,the grating-like patterns described herein may have dielectric finsspaced at a constant pitch and having a constant width. The pattern maybe fabricated by a pitch halving or pitch quartering, or other pitchdivision, approach. In an embodiment, the dielectric fin or fins 155each have squared-off (as shown) or rounder corners.

In an embodiment, as described above, the channel material layer 156 isa polycrystalline silicon layer. In one such embodiment, the gatedielectric layer 164 includes a layer of a high-k dielectric materialdirectly on a silicon oxide layer on the polycrystalline silicon layer.In another embodiment, the channel material layer 156 is apolycrystalline germanium material layer or a polycrystalline silicongermanium material layer.

In another embodiment, the channel material layer 156 is apolycrystalline group III-V material layer. In a specific embodiment,the gate dielectric layer 164 includes a layer of a high-k dielectricmaterial directly on the group III-V material layer.

In an alternative embodiment, the channel material layer 156 is asemiconducting oxide material layer. In one such embodiment, thesemiconducting oxide material layer includes indium gallium zinc oxide(IGZO). In one embodiment, the semiconducting oxide material layerincludes a material selected from the group consisting of tin oxide,antimony oxide, indium oxide, indium tin oxide, titanium oxide, zincoxide, indium zinc oxide, gallium oxide, titanium oxynitride, rutheniumoxide and tungsten oxide. In a specific embodiment, the gate dielectriclayer 164 includes a layer of a high-k dielectric material directly onthe semiconducting oxide material.

In order to highlight features 197, 198 and 199 from FIG. 1C, FIG. 1Fillustrates a cross-sectional view of a thin film tunnel field effecttransistor, in accordance with an embodiment of the present disclosure.In an embodiment, the gate electrode 158 and gate dielectric layer 164stack overlies the source portion 197 of the channel material layer 156.In one embodiment, the source portion 197 is a p-type doped portion(e.g., a boron-doped portion of a polycrystalline silicon layer). Thegate electrode 158 and gate dielectric layer 164 stack also overlies thedrain portion 199 of the channel material layer 156. In one embodiment,the drain portion 199 is an n-type doped portion (e.g., aphosphorus-doped portion or an arsenic-doped portion of apolycrystalline silicon layer). The gate electrode 158 and gatedielectric layer 164 stack also overlies an intrinsic region 198 betweenthe source portion 197 of the channel material layer 156 and the drainportion 199 of the channel material layer 156. In one embodiment, theintrinsic region 198 is essentially undoped in that any doping inherentto the channel material layer 156 is orders of magnitude less than thesource portion 197 and the drain portion 199.

FIG. 1G is an IV plot 180 for a thin film tunnel field effect transistorcompared to other state-of-the-art transistors, in accordance with anembodiment of the present disclosure. Referring to plot 180, whiletunnel FETs provides opportunity for low voltage operation, it haslimited drive strength. To increase this drive strength, a 3D tunnel FETarchitecture is implemented, examples of which are described herein.

As a second example of a structure having a relative increase intransistor width, FIG. 2A illustrates an angled three-dimensional viewof another thin film integrated circuit structure having relativelyincreased width, in accordance with another embodiment of the presentdisclosure. FIG. 2B illustrates a top-down view of a portion of the thinfilm integrated circuit structure of FIG. 2A.

Referring to FIGS. 2A and 2B, an integrated circuit structure 200includes an insulator structure 250 above a substrate 202. The insulatorstructure 250 may be formed on an insulator layer 204, as is depicted.The insulator structure 250 has a first trench 252 therein, the firsttrench 252 having sidewalls and a bottom. A channel material layer 206is in the first trench 252 in the insulator structure 250. The channelmaterial layer 206 is conformal with the sidewalls and bottom of thefirst trench 252. A gate dielectric layer 214 is on the channel materiallayer 206 in the first trench 252. The gate dielectric layer 214 isconformal with the channel material layer 206 conformal with thesidewalls and bottom of the first trench 252. A gate electrode 208 is onthe gate dielectric layer 214 in the first trench 252. The gateelectrode 208 has a first side opposite a second side and has an exposedtop surface.

A first conductive contact (left 254) is laterally adjacent the firstside of the gate electrode 208. The first conductive contact (left 254)is adjacent a source portion 297 of the channel material layer 206conformal with the sidewalls of the first trench 252. A secondconductive contact (right 254) is laterally adjacent the second side ofthe gate electrode 208. The second conductive contact (right 254) isadjacent a drain portion 299 of the channel material layer 206 conformalwith the sidewalls of the first trench 252. It is to be appreciated thatthe conductive contacts 254 are shown only at the front portion oftrench 252 for clarity of the drawing. In an embodiment, the conductivecontacts 254 extend all the way, or substantially all the way along thetrench 252 for maximized source/drain contact area and maintain arelatively small effective gate length.

In an embodiment, the source portion 297 of the channel material layer206 is a p-type doped portion (e.g., a boron-doped portion of apolycrystalline silicon layer), and the drain portion 299 of the channelmaterial layer 206 is an n-type doped portion (e.g., a phosphorus-dopedportion or an arsenic-doped portion of a polycrystalline silicon layer).In one embodiment, an intrinsic or lightly doped region 298 is betweenthe source portion 297 of the channel material layer 206 and the drainportion 299 of the channel material layer 206, as is depicted.

In an embodiment, the insulator structure 250 is a single layer of ILDmaterial, as is depicted. In another embodiment, the insulator structure250 is a stack of alternating dielectric layers, such as described belowin association with FIGS. 4A-4C.

In an embodiment, a third conductive contact 258 is over and in contactwith the exposed top surface of the gate electrode 208, as is depicted.In an embodiment, the first conductive contact (left 254) is in a secondtrench 270 in the insulator structure 250, and the third conductivecontact (right 254) is in a third trench 272 in the insulator structure250, as is depicted. In an embodiment, the third conductive contact 258is coupled to a conductive line 260, which may be a word line, as isdepicted. In an embodiment, the first and second conductive contacts 254are coupled corresponding conductive lines 256, as is depicted.

Referring again to FIG. 2, in an embodiment, a non-planar back-endtunnel FET architecture uses the vertical length (depth) of the trench252 to increase effective width of the transistor. That is, the depth ofthe trench 252 is the Z of the tunnel FET, where the effective width(Weff) is relatively increased by setting Z to the depth of the trench.

In an embodiment, as described above, the channel material layer 206 isa polycrystalline silicon layer. In one such embodiment, the gatedielectric layer 214 includes a layer of a high-k dielectric materialdirectly on a silicon oxide layer on the polycrystalline silicon layer.

In another embodiment, the channel material layer 206 is apolycrystalline group III-V material layer. In a specific embodiment,the gate dielectric layer 214 includes a layer of a high-k dielectricmaterial directly on the group III-V material layer.

In an alternative embodiment, the channel material layer 206 is asemiconducting oxide material layer. In one such embodiment, thesemiconducting oxide material layer includes indium gallium zinc oxide(IGZO). In one embodiment, the semiconducting oxide material layerincludes a material selected from the group consisting of tin oxide,antimony oxide, indium oxide, indium tin oxide, titanium oxide, zincoxide, indium zinc oxide, gallium oxide, titanium oxynitride, rutheniumoxide and tungsten oxide. In a specific embodiment, the gate dielectriclayer 214 includes a layer of a high-k dielectric material directly onthe semiconducting oxide material.

In accordance with an embodiment of the present disclosure, the abovetunnel FET non-planar architectures 150, 170 or 200 provide for highereffective widths for a transistor for a scaled projected area. In anembodiment, the drive strength and performance of such transistors areimproved over state-of-the-art planar BEOL transistors.

In one aspect, pocket structures of doping profiles are used tofabricate high quality tunnel FETs through angled implants. As anexemplary processing scheme, FIGS. 3A-3H illustrate cross-sectional andplan views of various stages in a method of fabricating a thin filmintegrated circuit structure having relatively increased width, inaccordance with an embodiment of the present disclosure.

Referring to FIG. 3A, a dielectric layer 302 is formed above a substrateand, possibly, on an insulating layer formed on or above the substrate.Openings 304 are formed in the dielectric layer 302.

Referring to FIG. 3B, conductive contacts 306, such as source/draincontacts, are formed in the openings 304 of the structure of FIG. 3A. Aconductive metal fill 306, e.g., a deposition or growth process may beused to fill openings 304.

Referring to FIG. 3C, an opening 308 is formed between the conductivemetal fill 306 to define conductive contacts 310.

Referring to FIG. 3D, a channel material layer 312 is formed along thesidewalls of opening 308 including along the exposed surfaces of theconductive contacts 310.

Referring to FIG. 3E, a first angled implant process is used to form afirst doped region 297 of a first conductivity type in the channelmaterial layer 312. In one embodiment, the doped region 297 is a p-typedoped region.

Referring to FIG. 3F, a second angled implant process is used to form asecond doped region 299A of a second conductivity type in the channelmaterial layer 312, the second conductivity type different than thefirst conductivity type. In one embodiment, the doped region 299A is ann-type doped region.

Referring to FIG. 3G, a third angled implant process is used to form athird doped region 299B of the second conductivity type in the channelmaterial layer 312. It is to be appreciated that the process may berepeated to achieve the same doping across laterally opposite sidewalls.In one embodiment, the third doped region 299B is an n-type doped regionhaving a dopant concentration less than the n-type dopant concentrationof the doped region 299A. Generically, the combination of the dopedregions 299A and 299 B may be referred to as a doped region 299 of thesecond conductivity type. In an embodiment, the use angled implantprocesses enable preservation of an intrinsic (or non-doped or lightlydoped) region 298 between the doped region 297 and the doped region 299,as is depicted.

Referring to FIG. 3H, a gate dielectric layer 320 is formed on andconformal with the channel material layer 312. In an embodiment, thegate dielectric layer 320 is a high-k gate dielectric layer. A gateelectrode 322 is formed on and conformal with the gate dielectric layer320. The structure of FIG. 3H may be included as a portion of the tunnelFET described in association with FIGS. 2A and 2B.

As another exemplary processing scheme, FIGS. 4A-4C illustratecross-sectional and plan views of various stages in a method offabricating another thin film integrated circuit structure havingrelatively increased width, in accordance with an embodiment of thepresent disclosure.

Referring to FIG. 4A, a stack 404 of dielectric layers is formed above asubstrate 400 and, possibly, on an insulating layer 402 formed on orabove the substrate 400. The stack 404 of dielectric layers includesalternating dielectric layers 404A and 404B of differing composition. Inone embodiment, the stack 404 of dielectric layers is a stack ofalternating silicon dioxide and silicon nitride layers.

Referring to FIG. 4B, openings 406 are formed in the stack 404 ofdielectric layers to form a once-patterned stack 404′ of dielectriclayers. In one embodiment, the structure of FIG. 4B is used without theprocess described below in association with FIG. 4C in order to arriveat a structure such as tunnel FET 200.

Referring to FIG. 4C, corrugation is achieved to form corrugatedopenings 408 by exposing the structure of FIG. 4B to an etch processthat recesses layers 404B selective to layers 404A. The selectiveetching process provides twice-patterned stack 404″ of dielectriclayers.

The twice-patterned stack 404″ of dielectric layers may be used in orderto fabricate a tunnel FET 300 having a corrugated topography. In onesuch embodiment, the corrugated topography varies along a plane normalwith a global plane of the substrate 402, as is depicted. A tunnel FETmay be fabricated in the trench of FIG. 4C to provide a structuresimilar to that of tunnel FET 200 which increases Z using the verticallength (depth) of the trench, but with the additional feature ofadditional length (Z) provided by the corrugation, to further increaseeffective width of the transistor. That is, the length of the corrugatedtrench is the Z of the ultimately fabricated tunnel FET, where theeffective width (Weff) is relatively increased by setting Z to the depthor length along the corrugated trench.

It is to be appreciated that the layers and materials described inassociation with embodiments herein are typically formed on or above anunderlying semiconductor substrate 152, 202 or 400, e.g., as FEOLlayer(s). In other embodiments, the layers and materials described inassociation with embodiments herein are typically formed on or aboveunderlying device layer(s) of an integrated circuit, e.g., as BEOLlayer(s) above an underlying semiconductor substrate 152, 202 or 400. Inan embodiment, an underlying semiconductor substrate represents ageneral workpiece object used to manufacture integrated circuits. Thesemiconductor substrate often includes a wafer or other piece of siliconor another semiconductor material. Suitable semiconductor substratesinclude, but are not limited to, single crystal silicon, polycrystallinesilicon and silicon on insulator (SOD, as well as similar substratesformed of other semiconductor materials. The semiconductor substrate,depending on the stage of manufacture, often includes transistors,integrated circuitry, and the like. The substrate may also includesemiconductor materials, metals, dielectrics, dopants, and othermaterials commonly found in semiconductor substrates. Furthermore,although not depicted, structures described herein may be fabricated onunderlying lower level back end of line (BEOL) interconnect layers.

In the case that an insulator layer 154, 204 or 402 is optionally used,the insulator layer 154, 204 or 402 may be composed of a materialsuitable to ultimately electrically isolate, or contribute to theisolation of, portions of a gate structure from an underlying bulksubstrate or interconnect layer. For example, in one embodiment, theinsulator layer 154, 204 or 402 is composed of a dielectric materialsuch as, but not limited to, silicon dioxide, silicon oxy-nitride,silicon nitride, or carbon-doped silicon nitride. In a particularembodiment, the insulator layer 154, 204 or 402 is a low-k dielectriclayer of an underlying BEOL layer.

In an embodiment, the channel material layer 156, 206 or 312 has athickness between 5 nanometers and 30 nanometers. In an embodiment, thechannel material layer 156, 206 or 312 is an amorphous, crystalline, orsemi crystalline oxide semiconductor, such as an amorphous, crystalline,or semi crystalline silicon. In an embodiment, the channel materiallayer 156, 206 or 312 is formed using a low-temperature depositionprocess, such as physical vapor deposition (PVD) (e.g., sputtering),atomic layer deposition (ALD), or chemical vapor deposition (CVD). Theability to deposit the channel material layer 156, 206 or 312 attemperatures low enough to be compatible with back-end manufacturingprocesses represents a particular advantage. The channel material layer156, 206 or 312 may be deposited on sidewalls or conformably on anydesired structure to a precise thickness, allowing the manufacture oftransistors having any desired geometry.

In an embodiment, gate electrode 158, 208 or 322 includes at least oneP-type work function metal or N-type work function metal, depending onwhether the integrated circuit device 150, 170 or 200 is to be includedin a P-type transistor or an N-type transistor. For a P-typetransistors, metals that may be used for the gate electrode 158, 208 or322 may include, but are not limited to, ruthenium, palladium, platinum,cobalt, nickel, and conductive metal oxides (e.g., ruthenium oxide). Foran N-type transistor, metals that may be used for the gate electrode158, 208 or 322 include, but are not limited to, hafnium, zirconium,titanium, tantalum, aluminum, alloys of these metals, and carbides ofthese metals (e.g., hafnium carbide, zirconium carbide, titaniumcarbide, tantalum carbide, and aluminum carbide). In some embodiments,the gate electrode includes a stack of two or more metal layers, whereone or more metal layers are work function metal layers and at least onemetal layer is a fill metal layer. Further metal layers may be includedfor other purposes, such as to act as a barrier layer. In someimplementations, the gate electrode 158, 208 or 322 may consist of a“U”-shaped structure that includes a bottom portion substantiallyparallel to the surface of the substrate and two sidewall portions thatare substantially perpendicular to the top surface of the substrate. Inanother implementation, at least one of the metal layers that form thegate electrode may simply be a planar layer that is substantiallyparallel to the top surface of the substrate and does not includesidewall portions substantially perpendicular to the top surface of thesubstrate. In further implementations of the disclosure, the gateelectrode may consist of a combination of U-shaped structures andplanar, non-U-shaped structures. For example, the gate electrode mayconsist of one or more U-shaped metal layers formed atop one or moreplanar, non-U-shaped layers.

In an embodiment, gate dielectric layer 164, 214 or 320 is composed of ahigh-K material. For example, in one embodiment, the gate dielectriclayer 164, 214 or 320 is composed of a material such as, but not limitedto, hafnium oxide, hafnium oxy-nitride, hafnium silicate, lanthanumoxide, zirconium oxide, zirconium silicate, tantalum oxide, bariumstrontium titanate, barium titanate, strontium titanate, yttrium oxide,aluminum oxide, lead scandium tantalum oxide, lead zinc niobate, or acombination thereof. In some implementations, the gate dielectric 164,214 or 320 may consist of a “U”-shaped structure that includes a bottomportion substantially parallel to the surface of the substrate and twosidewall portions that are substantially perpendicular to the topsurface of the substrate, as is depicted in FIGS. 1C and 1E.

In an embodiment, dielectric spacers 172 are formed from a material suchas silicon nitride, silicon oxide, silicon carbide, silicon nitridedoped with carbon, and silicon oxynitride. Processes for formingsidewall spacers are well known in the art and generally includedeposition and etching process steps. In some embodiments, a pluralityof spacer pairs may be used. For example, two pairs, three pairs, orfour pairs of sidewall spacers may be formed on opposing sides of thegate electrode 172.

In an embodiment, conductive contacts 174, 254 or 258 act as contacts tosource/drain regions of a tunnel FET, or act directly as source/drainregions of the tunnel FET. The conductive contacts 174, 254 or 258 maybe spaced apart by a distance that is the gate length of the transistor150, 170 or 200. In an embodiment, conductive contacts 258 or 358directly contact a gate electrode. In some embodiments, the gate lengthis between 7 and 30 nanometers. In an embodiment, the conductivecontacts 174, 254 or 258 include one or more layers of metal and/ormetal alloys. In a particular embodiment, the conductive contacts 174,254 or 258 are composed of aluminum or an aluminum-containing alloy.

In an embodiment, interconnect lines (and, possibly, underlying viastructures), such as interconnect lines 256 or 260 described herein arecomposed of one or more metal or metal-containing conductive structures.The conductive interconnect lines are also sometimes referred to in theart as traces, wires, lines, metal, interconnect lines or simplyinterconnects. In a particular embodiment, each of the interconnectlines includes a barrier layer and a conductive fill material. In anembodiment, the barrier layer is composed of a metal nitride material,such as tantalum nitride or titanium nitride. In an embodiment, theconductive fill material is composed of a conductive material such as,but not limited to, Cu, Al, Ti, Zr, Hf, V, Ru, Co, Ni, Pd, Pt, W, Ag, Auor alloys thereof.

Interconnect lines described herein may be fabricated as a gratingstructure, where the term “grating” is used herein to refer to a tightpitch grating structure. In one such embodiment, the tight pitch is notachievable directly through conventional lithography. For example, apattern based on conventional lithography may first be formed, but thepitch may be halved by the use of spacer mask patterning, as is known inthe art. Even further, the original pitch may be quartered by a secondround of spacer mask patterning. Accordingly, the grating-like patternsdescribed herein may have conductive lines spaced at a constant pitchand having a constant width. The pattern may be fabricated by a pitchhalving or pitch quartering, or other pitch division, approach.

In an embodiment, ILD materials described herein, such as ILD materials250 or 350, are composed of or include a layer of a dielectric orinsulating material. Examples of suitable dielectric materials include,but are not limited to, oxides of silicon (e.g., silicon dioxide(SiO2)), doped oxides of silicon, fluorinated oxides of silicon, carbondoped oxides of silicon, various low-k dielectric materials known in thearts, and combinations thereof. The interlayer dielectric material maybe formed by conventional techniques, such as, for example, chemicalvapor deposition (CVD), physical vapor deposition (PVD), or by otherdeposition methods.

In one aspect, a gate electrode and gate dielectric layer, e.g., gateelectrode 158, 208 or 322 and gate dielectric layer 164, 214 or 320 maybe fabricated by a replacement gate process. In such a scheme, dummygate material such as polysilicon or silicon nitride pillar material,may be removed and replaced with permanent gate electrode material. Inone such embodiment, a permanent gate dielectric layer is also formed inthis process, as opposed to being carried through from earlierprocessing. In an embodiment, dummy gates are removed by a dry etch orwet etch process. In one embodiment, dummy gates are composed ofpolycrystalline silicon or amorphous silicon and are removed with a dryetch process including use of SF6. In another embodiment, dummy gatesare composed of polycrystalline silicon or amorphous silicon and areremoved with a wet etch process including use of aqueous NH4OH ortetramethylammonium hydroxide. In one embodiment, dummy gates arecomposed of silicon nitride and are removed with a wet etch includingaqueous phosphoric acid.

In an embodiment, one or more approaches described herein contemplateessentially a dummy and replacement gate process in combination with adummy and replacement contact process to arrive at structures describedherein. In one such embodiment, the replacement contact process isperformed after the replacement gate process to allow high temperatureanneal of at least a portion of the permanent gate stack. For example,in a specific such embodiment, an anneal of at least a portion of thepermanent gate structures, e.g., after a gate dielectric layer isformed. The anneal is performed prior to formation of the permanentcontacts.

It is to be appreciated that not all aspects of the processes describedabove need be practiced to fall within the spirit and scope ofembodiments of the present disclosure. For example, in one embodiment,dummy gates need not ever be formed prior to fabricating gate contactsover active portions of the gate stacks. The gate stacks described abovemay actually be permanent gate stacks as initially formed. Also, theprocesses described herein may be used to fabricate one or a pluralityof semiconductor devices. One or more embodiments may be particularlyuseful for fabricating semiconductor devices at a 10 nanometer (10 nm)or smaller technology node.

In an embodiment, as is also used throughout the present description,lithographic operations are performed using 193 nm immersion lithography(i193), extreme ultra-violet (EUV) and/or electron beam direct write(EBDW) lithography, or the like. A positive tone or a negative toneresist may be used. In one embodiment, a lithographic mask is a trilayermask composed of a topographic masking portion, an anti-reflectivecoating (ARC) layer, and a photoresist layer. In a particular suchembodiment, the topographic masking portion is a carbon hardmask (CHM)layer and the anti-reflective coating layer is a silicon ARC layer.

In another aspect, the integrated circuit structures described hereinmay be included in an electronic device. As a first example of anapparatus that may include one or more of the tunnel FETs disclosedherein, FIGS. 5A and 5B are top views of a wafer and dies that includeone or more thin film tunnel field effect transistors having relativelyincreased width, in accordance with any of the embodiments disclosedherein.

Referring to FIGS. 5A and 5B, a wafer 500 may be composed ofsemiconductor material and may include one or more dies 502 havingintegrated circuit (IC) structures formed on a surface of the wafer 500.Each of the dies 502 may be a repeating unit of a semiconductor productthat includes any suitable IC (e.g., ICs including one or morestructures such as structures 150, 170 or 200). After the fabrication ofthe semiconductor product is complete (e.g., after manufacture ofstructures 150, 170 or 200), the wafer 500 may undergo a singulationprocess in which each of the dies 502 is separated from one another toprovide discrete “chips” of the semiconductor product. In particular,devices that include TFT as disclosed herein may take the form of thewafer 500 (e.g., not singulated) or the form of the die 502 (e.g.,singulated). The die 502 may include one or more transistors and/orsupporting circuitry to route electrical signals to the transistors, aswell as any other IC components. In some embodiments, the wafer 500 orthe die 502 may include a memory device (e.g., a static random accessmemory (SRAM) device), a logic device (e.g., an AND, OR, NAND, or NORgate), or any other suitable circuit element. Multiple ones of thesedevices may be combined on a single die 502. For example, a memory arrayformed by multiple memory devices may be formed on a same die 502 as aprocessing device or other logic that is configured to store informationin the memory devices or execute instructions stored in the memoryarray.

FIG. 6 is a cross-sectional side view of an integrated circuit (IC)device that may include one or more thin film tunnel field effecttransistors having relatively increased width, in accordance with one ormore of the embodiments disclosed herein.

Referring to FIG. 6, an IC device 600 is formed on a substrate 602(e.g., the wafer 500 of FIG. 5A) and may be included in a die (e.g., thedie 502 of FIG. 5B), which may be singulated or included in a wafer.Although a few examples of materials from which the substrate 602 may beformed are described above in association with substrate 152, 202, 302or 400, any material that may serve as a foundation for an IC device 600may be used.

The IC device 600 may include one or more device layers, such as devicelayer 604, disposed on the substrate 602. The device layer 604 mayinclude features of one or more transistors 640 (e.g., TFTs describedabove) formed on the substrate 602. The device layer 604 may include,for example, one or more source and/or drain (S/D) regions 620, a gate622 to control current flow in the transistors 640 between the S/Dregions 620, and one or more S/D contacts 624 to route electricalsignals to/from the S/D regions 620. The transistors 640 may includeadditional features not depicted for the sake of clarity, such as deviceisolation regions, gate contacts, and the like. The transistors 640 arenot limited to the type and configuration depicted in FIG. 6 and mayinclude a wide variety of other types and configurations such as, forexample, planar transistors, non-planar transistors, or a combination ofboth. Non-planar transistors may include Fin-based transistors, such asdouble-gate transistors or tri-gate transistors, and wrap-around orall-around gate transistors, such as nanoribbon and nanowiretransistors. In particular, one or more of the transistors 640 take theform of the transistors 150, 170 or 200. Thin-film transistors such as150, 170 or 200 may be particularly advantageous when used in the metallayers of a microprocessor device for analog circuitry, logic circuitry,or memory circuitry, and may be formed along with existing complementarymetal oxide semiconductor (CMOS) processes.

Electrical signals, such as power and/or input/output (I/O) signals, maybe routed to and/or from the transistors 640 of the device layer 604through one or more interconnect layers disposed on the device layer 604(illustrated in FIG. 6 as interconnect layers 606-610). For example,electrically conductive features of the device layer 604 (e.g., the gate622 and the S/D contacts 624) may be electrically coupled with theinterconnect structures 628 of the interconnect layers 606-610. The oneor more interconnect layers 606-610 may form an interlayer dielectric(ILD) stack 619 of the IC device 600.

The interconnect structures 628 may be arranged within the interconnectlayers 606-610 to route electrical signals according to a wide varietyof designs (in particular, the arrangement is not limited to theparticular configuration of interconnect structures 628 depicted in FIG.6). Although a particular number of interconnect layers 606-610 isdepicted in FIG. 6, embodiments of the present disclosure include ICdevices having more or fewer interconnect layers than depicted.

In some embodiments, the interconnect structures 628 may include trenchstructures 628 a (sometimes referred to as “lines”) and/or viastructures 628 b filled with an electrically conductive material such asa metal. The trench structures 628 a may be arranged to route electricalsignals in a direction of a plane that is substantially parallel with asurface of the substrate 602 upon which the device layer 604 is formed.For example, the trench structures 628 a may route electrical signals ina direction in and out of the page from the perspective of FIG. 6. Thevia structures 628 b may be arranged to route electrical signals in adirection of a plane that is substantially perpendicular to the surfaceof the substrate 602 upon which the device layer 604 is formed. In someembodiments, the via structures 628 b may electrically couple trenchstructures 628 a of different interconnect layers 606-610 together.

The interconnect layers 606-610 may include a dielectric material 626disposed between the interconnect structures 628, as shown in FIG. 6. Insome embodiments, the dielectric material 626 disposed between theinterconnect structures 628 in different ones of the interconnect layers606-610 may have different compositions; in other embodiments, thecomposition of the dielectric material 626 between differentinterconnect layers 606-610 may be the same. In either case, suchdielectric materials may be referred to as inter-layer dielectric (ILD)materials.

A first interconnect layer 606 (referred to as Metal 1 or “M1”) may beformed directly on the device layer 604. In some embodiments, the firstinterconnect layer 606 may include trench structures 628 a and/or viastructures 628 b, as shown. The trench structures 628 a of the firstinterconnect layer 606 may be coupled with contacts (e.g., the S/Dcontacts 624) of the device layer 604.

A second interconnect layer 608 (referred to as Metal 2 or “M2”) may beformed directly on the first interconnect layer 606. In someembodiments, the second interconnect layer 608 may include viastructures 628 b to couple the trench structures 628 a of the secondinterconnect layer 608 with the trench structures 628 a of the firstinterconnect layer 606. Although the trench structures 628 a and the viastructures 628 b are structurally delineated with a line within eachinterconnect layer (e.g., within the second interconnect layer 608) forthe sake of clarity, the trench structures 628 a and the via structures628 b may be structurally and/or materially contiguous (e.g.,simultaneously filled during a dual-damascene process) in someembodiments. A third interconnect layer 610 (referred to as Metal 3 or“M3”) (and additional interconnect layers, as desired) may be formed insuccession on the second interconnect layer 608 according to similartechniques and configurations described in connection with the secondinterconnect layer 608 or the first interconnect layer 606.

The IC device 600 may include a solder resist material 634 (e.g.,polyimide or similar material) and one or more bond pads 636 formed onthe interconnect layers 606-610. The bond pads 636 may be electricallycoupled with the interconnect structures 628 and configured to route theelectrical signals of the transistor(s) 640 to other external devices.For example, solder bonds may be formed on the one or more bond pads 636to mechanically and/or electrically couple a chip including the ICdevice 600 with another component (e.g., a circuit board). The IC device600 may have other alternative configurations to route the electricalsignals from the interconnect layers 606-610 than depicted in otherembodiments. For example, the bond pads 636 may be replaced by or mayfurther include other analogous features (e.g., posts) that route theelectrical signals to external components.

FIG. 7 is a cross-sectional side view of an integrated circuit (IC)device assembly that may include one or more thin film tunnel fieldeffect transistors having relatively increased width, in accordance withone or more of the embodiments disclosed herein.

Referring to FIG. 7, an IC device assembly 700 includes componentshaving one or more integrated circuit structures described herein. TheIC device assembly 700 includes a number of components disposed on acircuit board 702 (which may be, e.g., a motherboard). The IC deviceassembly 700 includes components disposed on a first face 740 of thecircuit board 702 and an opposing second face 742 of the circuit board702. Generally, components may be disposed on one or both faces 740 and742. In particular, any suitable ones of the components of the IC deviceassembly 700 may include a number of the tunnel FET structures 150, 170or 200 disclosed herein.

In some embodiments, the circuit board 702 may be a printed circuitboard (PCB) including multiple metal layers separated from one anotherby layers of dielectric material and interconnected by electricallyconductive vias. Any one or more of the metal layers may be formed in adesired circuit pattern to route electrical signals (optionally inconjunction with other metal layers) between the components coupled tothe circuit board 702. In other embodiments, the circuit board 702 maybe a non-PCB substrate.

The IC device assembly 700 illustrated in FIG. 7 includes apackage-on-interposer structure 736 coupled to the first face 740 of thecircuit board 702 by coupling components 716. The coupling components716 may electrically and mechanically couple the package-on-interposerstructure 736 to the circuit board 702, and may include solder balls (asshown in FIG. 7), male and female portions of a socket, an adhesive, anunderfill material, and/or any other suitable electrical and/ormechanical coupling structure.

The package-on-interposer structure 736 may include an IC package 720coupled to an interposer 704 by coupling components 718. The couplingcomponents 718 may take any suitable form for the application, such asthe forms discussed above with reference to the coupling components 716.Although a single IC package 720 is shown in FIG. 7, multiple ICpackages may be coupled to the interposer 704. It is to be appreciatedthat additional interposers may be coupled to the interposer 704. Theinterposer 704 may provide an intervening substrate used to bridge thecircuit board 702 and the IC package 720. The IC package 720 may be orinclude, for example, a die (the die 502 of FIG. 5B), an IC device(e.g., the IC device 600 of FIG. 6), or any other suitable component.Generally, the interposer 704 may spread a connection to a wider pitchor reroute a connection to a different connection. For example, theinterposer 704 may couple the IC package 720 (e.g., a die) to a ballgrid array (BGA) of the coupling components 716 for coupling to thecircuit board 702. In the embodiment illustrated in FIG. 7, the ICpackage 720 and the circuit board 702 are attached to opposing sides ofthe interposer 704. In other embodiments, the IC package 720 and thecircuit board 702 may be attached to a same side of the interposer 704.In some embodiments, three or more components may be interconnected byway of the interposer 704.

The interposer 704 may be formed of an epoxy resin, afiberglass-reinforced epoxy resin, a ceramic material, or a polymermaterial such as polyimide. In some implementations, the interposer 704may be formed of alternate rigid or flexible materials that may includethe same materials described above for use in a semiconductor substrate,such as silicon, germanium, and other group III-V and group IVmaterials. The interposer 704 may include metal interconnects 708 andvias 710, including but not limited to through-silicon vias (TSVs) 706.The interposer 704 may further include embedded devices 714, includingboth passive and active devices. Such devices may include, but are notlimited to, capacitors, decoupling capacitors, resistors, inductors,fuses, diodes, transformers, sensors, electrostatic discharge (ESD)devices, and memory devices. More complex devices such asradio-frequency (RF) devices, power amplifiers, power managementdevices, antennas, arrays, sensors, and microelectromechanical systems(MEMS) devices may also be formed on the interposer 704. Thepackage-on-interposer structure 736 may take the form of any of thepackage-on-interposer structures known in the art.

The IC device assembly 700 may include an IC package 724 coupled to thefirst face 740 of the circuit board 702 by coupling components 722. Thecoupling components 722 may take the form of any of the embodimentsdiscussed above with reference to the coupling components 716, and theIC package 724 may take the form of any of the embodiments discussedabove with reference to the IC package 720.

The IC device assembly 700 illustrated in FIG. 7 includes apackage-on-package structure 734 coupled to the second face 742 of thecircuit board 702 by coupling components 728. The package-on-packagestructure 734 may include an IC package 726 and an IC package 732coupled together by coupling components 730 such that the IC package 726is disposed between the circuit board 702 and the IC package 732. Thecoupling components 728 and 730 may take the form of any of theembodiments of the coupling components 716 discussed above, and the ICpackages 726 and 732 may take the form of any of the embodiments of theIC package 720 discussed above. The package-on-package structure 734 maybe configured in accordance with any of the package-on-packagestructures known in the art.

Embodiments disclosed herein may be used to manufacture a wide varietyof different types of integrated circuits and/or microelectronicdevices. Examples of such integrated circuits include, but are notlimited to, processors, chipset components, graphics processors, digitalsignal processors, micro-controllers, and the like. In otherembodiments, semiconductor memory may be manufactured. Moreover, theintegrated circuits or other microelectronic devices may be used in awide variety of electronic devices known in the arts. For example, incomputer systems (e.g., desktop, laptop, server), cellular phones,personal electronics, etc. The integrated circuits may be coupled with abus and other components in the systems. For example, a processor may becoupled by one or more buses to a memory, a chipset, etc. Each of theprocessor, the memory, and the chipset, may potentially be manufacturedusing the approaches disclosed herein.

FIG. 8 illustrates a computing device 800 in accordance with oneimplementation of the disclosure. The computing device 800 houses aboard 802. The board 802 may include a number of components, includingbut not limited to a processor 804 and at least one communication chip806. The processor 804 is physically and electrically coupled to theboard 802. In some implementations the at least one communication chip806 is also physically and electrically coupled to the board 802. Infurther implementations, the communication chip 806 is part of theprocessor 804.

Depending on its applications, computing device 800 may include othercomponents that may or may not be physically and electrically coupled tothe board 802. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 806 enables wireless communications for thetransfer of data to and from the computing device 800. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 806 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 800 may include a plurality ofcommunication chips 806. For instance, a first communication chip 806may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 806 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 804 of the computing device 800 includes an integratedcircuit die packaged within the processor 804. In some implementationsof the disclosure, the integrated circuit die of the processor includesone or more thin film tunnel field effect transistors having relativelyincreased width, in accordance with implementations of embodiments ofthe disclosure. The term “processor” may refer to any device or portionof a device that processes electronic data from registers and/or memoryto transform that electronic data into other electronic data that may bestored in registers and/or memory.

The communication chip 806 also includes an integrated circuit diepackaged within the communication chip 806. In accordance with anotherimplementation of embodiments of the disclosure, the integrated circuitdie of the communication chip includes one or more thin film tunnelfield effect transistors having relatively increased width, inaccordance with implementations of embodiments of the disclosure.

In further implementations, another component housed within thecomputing device 800 may contain an integrated circuit die that includesone or more thin film tunnel field effect transistors having relativelyincreased width, in accordance with implementations of embodiments ofthe disclosure.

In various implementations, the computing device 800 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 800 may be any other electronic device that processes data.

Thus, embodiments described herein include thin film tunnel field effecttransistors having relatively increased width.

The above description of illustrated implementations of embodiments ofthe disclosure, including what is described in the Abstract, is notintended to be exhaustive or to limit the disclosure to the preciseforms disclosed. While specific implementations of, and examples for,the disclosure are described herein for illustrative purposes, variousequivalent modifications are possible within the scope of thedisclosure, as those skilled in the relevant art will recognize.

These modifications may be made to the disclosure in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the disclosure to the specific implementationsdisclosed in the specification and the claims. Rather, the scope of thedisclosure is to be determined entirely by the following claims, whichare to be construed in accordance with established doctrines of claiminterpretation.

Example Embodiment 1

An integrated circuit structure includes an insulator structure above asubstrate. The insulator structure has a topography that varies along aplane parallel with a global plane of the substrate. A channel materiallayer is on the insulator structure. The channel material layer isconformal with the topography of the insulator structure. A gateelectrode is over a channel portion of the channel material layer on theinsulator structure. The gate electrode has a first side opposite asecond side. A first conductive contact is adjacent the first side ofthe gate electrode. The first conductive contact is over a sourceportion of the channel material layer on the insulator structure, thesource portion of the channel material layer having a first conductivitytype. A second conductive contact is adjacent the second side of thegate electrode. The second conductive contact is over a drain portion ofthe channel material layer on the insulator structure, the drain portionof the channel material layer having a second conductivity type oppositethe first conductivity type.

Example Embodiment 2

The integrated circuit structure of example embodiment 1, wherein theinsulator structure includes one or more fins. Individual ones of thefins have a top and sidewalls. The channel material is on the top andsidewalls of the individual ones of the fins. Example embodiment 3: Theintegrated circuit structure of example embodiment 1 or 2, wherein thechannel material layer comprises polycrystalline silicon.

Example Embodiment 4

The integrated circuit structure of example embodiment 1, 2 or 3,wherein the first conductivity type is p-type, and the secondconductivity type is n-type.

Example Embodiment 5

The integrated circuit structure of example embodiment 1, 2, 3 or 4,further including a gate dielectric layer between the gate electrode andthe first portion of the channel material layer on the insulatorstructure.

Example Embodiment 6

The integrated circuit structure of example embodiment 5, wherein thegate dielectric layer includes a layer of a high-k dielectric material.

Example Embodiment 7

The integrated circuit structure of example embodiment 1, 2, 3, 4, 5 or6, further including a first dielectric spacer between the firstconductive contact and the first side of the gate electrode. A seconddielectric spacer is between the second conductive contact and thesecond side of the gate electrode.

Example Embodiment 8

The integrated circuit structure of example embodiment 1, 2, 3, 4, 5, 6or 7, further including an intrinsic region in the channel materiallayer, the intrinsic region between the source portion and the drainportion of the channel material layer.

Example Embodiment 9

The integrated circuit structure of example embodiment 1, 2, 4, 5, 6, 7or 8, wherein the channel material layer comprises a group III-Vmaterial or a semiconducting oxide material.

Example Embodiment 10

An integrated circuit structure includes an insulator structure above asubstrate. The insulator structure has a trench therein, the trenchhaving sidewalls and a bottom. A channel material layer is in the trenchin the insulator structure, the channel material layer conformal withthe sidewalls and bottom of the trench. A gate dielectric layer is onthe channel material layer in the trench, the gate dielectric layerconformal with the channel material layer conformal with the sidewallsand bottom of the trench. A gate electrode is on the gate dielectriclayer in the trench, the gate electrode having a first side opposite asecond side and having an exposed top surface. A first conductivecontact is laterally adjacent the first side of the gate electrode, thefirst conductive contact adjacent a source portion of the channelmaterial layer conformal with the sidewalls of the trench, the sourceportion of the channel material layer having a first conductivity type.A second conductive contact is laterally adjacent the second side of thegate electrode, the second conductive contact adjacent a second portionof the channel material layer conformal with the sidewalls of thetrench, the drain portion of the channel material layer having a secondconductivity type opposite the first conductivity type.

Example Embodiment 11

The integrated circuit structure of example embodiment 10, furtherincluding a third conductive contact over and in contact with theexposed top surface of the gate electrode.

Example Embodiment 12

The integrated circuit structure of example embodiment 10 or 11, whereinthe first conductive contact is in a second trench in the insulatorstructure, and the third conductive contact is in a third trench in theinsulator structure.

Example Embodiment 13

The integrated circuit structure of example embodiment 10, 11 or 12,wherein the channel material layer comprises polycrystalline silicon.

Example Embodiment 14

The integrated circuit structure of example embodiment 10, 11, 12 or 13,wherein the first conductivity type is p-type, and the secondconductivity type is n-type.

Example Embodiment 15

The integrated circuit structure of example embodiment 10, 11, 12, 13 or14, further including an intrinsic region in the channel material layer,the intrinsic region between the source portion and the drain portion ofthe channel material layer.

Example Embodiment 16

An integrated circuit structure includes an insulator structure above asubstrate. The insulator structure has a trench therein, the trenchhaving sidewalls and a bottom. At least one of the sidewalls of thetrench comprises a corrugated arrangement of alternating dielectriclayers. A channel material layer is in the trench in the insulatorstructure, the channel material layer conformal with the sidewalls andbottom of the trench, including the at least one of the sidewalls of thetrench comprises a corrugated arrangement of alternating dielectriclayers. A gate dielectric layer is on the channel material layer in thetrench, the gate dielectric layer conformal with the channel materiallayer conformal with the sidewalls and bottom of the trench. A gateelectrode is on the gate dielectric layer in the trench, the gateelectrode having a first side opposite a second side and having anexposed top surface. A first conductive contact is laterally adjacentthe first side of the gate electrode, the first conductive contactadjacent a source portion of the channel material layer conformal withthe sidewalls of the trench, the source portion of the channel materiallayer having a first conductivity type. A second conductive contact islaterally adjacent the second side of the gate electrode, the secondconductive contact adjacent a second portion of the channel materiallayer conformal with the sidewalls of the trench, the drain portion ofthe channel material layer having a second conductivity type oppositethe first conductivity type.

Example Embodiment 17

The integrated circuit structure of example embodiment 16, furtherincluding a third conductive contact over and in contact with theexposed top surface of the gate electrode.

Example Embodiment 18

The integrated circuit structure of example embodiment 16 or 17, whereinthe first conductive contact is in a second trench in the insulatorstructure, and the third conductive contact is in a third trench in theinsulator structure.

Example Embodiment 19

The integrated circuit structure of example embodiment 16, 17 or 18,wherein the channel material layer comprises polycrystalline silicon.

Example Embodiment 20

The integrated circuit structure of example embodiment 16, 17, 18 or 19,wherein the first conductivity type is p-type, and the secondconductivity type is n-type.

Example Embodiment 21

The integrated circuit structure of example embodiment 16, 17, 18, 19 or20, further including an intrinsic region in the channel material layer,the intrinsic region between the source portion and the drain portion ofthe channel material layer.

What is claimed is:
 1. An integrated circuit structure, comprising: aninsulator structure above a substrate, the insulator structure having atopography that varies along a plane parallel with a global plane of thesubstrate; a channel material layer on the insulator structure, thechannel material layer conformal with the topography of the insulatorstructure; a gate electrode over a channel portion of the channelmaterial layer on the insulator structure, the gate electrode having afirst side opposite a second side; a first conductive contact adjacentthe first side of the gate electrode, the first conductive contact overa source portion of the channel material layer on the insulatorstructure, the source portion of the channel material layer having afirst conductivity type; and a second conductive contact adjacent thesecond side of the gate electrode, the second conductive contact over adrain portion of the channel material layer on the insulator structure,the drain portion of the channel material layer having a secondconductivity type opposite the first conductivity type.
 2. Theintegrated circuit structure of claim 1, wherein the insulator structurecomprises one or more fins, individual ones of the fins having a top andsidewalls, the channel material layer on the top and sidewalls of theindividual ones of the fins.
 3. The integrated circuit structure ofclaim 1, wherein the channel material layer comprises polycrystallinesilicon.
 4. The integrated circuit structure of claim 1, wherein thefirst conductivity type is p-type, and the second conductivity type isn-type.
 5. The integrated circuit structure of claim 1, furthercomprising: a gate dielectric layer between the gate electrode and thechannel portion of the channel material layer on the insulatorstructure.
 6. The integrated circuit structure of claim 5, wherein thegate dielectric layer comprises a layer of a high-k dielectric material.7. The integrated circuit structure of claim 1, further comprising: afirst dielectric spacer between the first conductive contact and thefirst side of the gate electrode; and a second dielectric spacer betweenthe second conductive contact and the second side of the gate electrode.8. The integrated circuit structure of claim 1, further comprising: anintrinsic region in the channel material layer, the intrinsic regionbetween the source portion and the drain portion of the channel materiallayer.
 9. The integrated circuit structure of claim 1, wherein thechannel material layer comprises a group III-V material or asemiconducting oxide material.
 10. An integrated circuit structure,comprising: an insulator structure above a substrate, the insulatorstructure having a trench therein, the trench having sidewalls and abottom; a channel material layer in the trench in the insulatorstructure, the channel material layer conformal with the sidewalls andbottom of the trench; a gate dielectric layer on the channel materiallayer in the trench, the gate dielectric layer conformal with thechannel material layer conformal with the sidewalls and bottom of thetrench; a gate electrode on the gate dielectric layer in the trench, thegate electrode having a first side opposite a second side and having anexposed top surface; a first conductive contact laterally adjacent thefirst side of the gate electrode, the first conductive contact adjacenta source portion of the channel material layer conformal with thesidewalls of the trench, the source portion of the channel materiallayer having a first conductivity type; and a second conductive contactlaterally adjacent the second side of the gate electrode, the secondconductive contact adjacent a drain portion of the channel materiallayer conformal with the sidewalls of the trench, the drain portion ofthe channel material layer having a second conductivity type oppositethe first conductivity type.
 11. The integrated circuit structure ofclaim 10, further comprising: a third conductive contact over and incontact with the exposed top surface of the gate electrode.
 12. Theintegrated circuit structure of claim 10, wherein the first conductivecontact is in a second trench in the insulator structure, and the thirdconductive contact is in a third trench in the insulator structure. 13.The integrated circuit structure of claim 10, wherein the channelmaterial layer comprises polycrystalline silicon.
 14. The integratedcircuit structure of claim 10, wherein the first conductivity type isp-type, and the second conductivity type is n-type.
 15. The integratedcircuit structure of claim 10, further comprising: an intrinsic regionin the channel material layer, the intrinsic region between the sourceportion and the drain portion of the channel material layer.
 16. Anintegrated circuit structure, comprising: an insulator structure above asubstrate, the insulator structure having a trench therein, the trenchhaving sidewalls and a bottom, wherein at least one of the sidewalls ofthe trench comprises a corrugated arrangement of alternating dielectriclayers; a channel material layer in the trench in the insulatorstructure, the channel material layer conformal with the sidewalls andbottom of the trench, including with the at least one of the sidewallsof the trench comprising the corrugated arrangement of alternatingdielectric layers; a gate dielectric layer on the channel material layerin the trench, the gate dielectric layer conformal with the channelmaterial layer conformal with the sidewalls and bottom of the trench; agate electrode on the gate dielectric layer in the trench, the gateelectrode having a first side opposite a second side and having anexposed top surface; a first conductive contact laterally adjacent thefirst side of the gate electrode, the first conductive contact adjacenta source portion of the channel material layer conformal with thesidewalls of the trench, the source portion of the channel materiallayer having a first conductivity type; and a second conductive contactlaterally adjacent the second side of the gate electrode, the secondconductive contact adjacent a drain portion of the channel materiallayer conformal with the sidewalls of the trench, the drain portion ofthe channel material layer having a second conductivity type oppositethe first conductivity type.
 17. The integrated circuit structure ofclaim 16, further comprising: a third conductive contact over and incontact with the exposed top surface of the gate electrode.
 18. Theintegrated circuit structure of claim 16, wherein the first conductivecontact is in a second trench in the insulator structure, and the thirdconductive contact is in a third trench in the insulator structure. 19.The integrated circuit structure of claim 16, wherein the channelmaterial layer comprises polycrystalline silicon.
 20. The integratedcircuit structure of claim 16, wherein the first conductivity type isp-type, and the second conductivity type is n-type.
 21. The integratedcircuit structure of claim 16, further comprising: an intrinsic regionin the channel material layer, the intrinsic region between the sourceportion and the drain portion of the channel material layer.